Infineon's bulk silicon process produces transistors and transistor logic devices that are the best in terms of integration capabilities, and compared to gallium arsenide and gallium nitride, this process does not require an additional oxide layer or different materials as part of the wafer processing, which means that production costs can be kept very low, and it is also possible to achieve designs with limited space on the board, which is a proven technology with low manufacturing costs, high performance and good low power performance. [← 8 [← 8 [← read [← book, .2↘

At this stage, the best process technology mastered by Zhongjing Micro is the FinFet process, and the process on the traditional metal oxide semiconductor structure transistors and transistor logic devices is still lacking.

Over the years, these companies have continued to improve their traditional architectures, including the use of high-K dielectrics to reduce leakage, the use of strained silicon technology, and the use of metal gates to cope with multiple consumption.

Intel is the best at this technology, and is now starting to introduce high-K dielectric and metal gate technology to its own 45nm process node.

After joining Zhongjing, the technical team led by Tan Yunsong mainly focused on the two processes of FinFet and soi, because these two processes are new structures and are less restricted by foreign technologies, but it does not mean that the company has not worked the traditional metal oxide semiconductor structure process.

However, there are a lot of debts in this area in China, which requires a lot of energy, and can only be trained by recruiting technical personnel in this area.

On the basis of the FinFet process, the main structure of these two structures is thin, so the gate capacitor is closer to the whole channel, and the body is very thin, about 10 nm or less, so there is no leakage path far away from the gate, and the gate can effectively control the leakage. →?8→.? Eight** read?? Book, .↓.o≥

Now the company's FinFet structure process can be implemented on bulk silicon or soi wafers, providing many advantages over bulk silicon metal oxide semiconductor structure, higher drive current for a given transistor duty cycle, higher speed, lower leakage, lower power consumption, no random dopant fluctuations, so the transistor mobility and size are better, but the process cost is still higher than that of the metal oxide semiconductor structure process.

The main difference between the silicon on the insulator, that is, the SOI structure process and the traditional metal oxide semiconductor structure, is that the SOI device has a buried oxide layer, which isolates the substrate from the substrate, that is, the wafer is different, the hardness of the SOI wafer is much higher than that of the bulk silicon, and it is very difficult to control the tin-silicon film on the entire wafer, and it requires the use of special equipment to thin the wafer to below 100 nanometers, which shows the difficulty of the starting point.

In contrast, one of the disadvantages of the FinFet process is its complex manufacturing process, and the stumbling block of the SOI process is the production and supply of SOI wafers, which can account for about 10% of the total process cost.

These two processes can be used to produce chips with high profits, but the vast majority of chip costs must be controlled at a very low level to be competitive.

Previously, Zhongjing Micro acquired the wafer factory of licensed semiconductors to obtain a group of technical personnel for the structure process of traditional metal oxide semiconductors, but many processes are authorized by the production process of Western companies, and the source of technology still comes from these domestic companies in Eagle Sauce.

Although Crystal Micro has also obtained some technical patents in the metal oxide semiconductor structure process in recent years, it is still catching up with them compared to Intel and International Business Machines.

In fact, Intel and IWC are researching the soi and FinFet structures, and they are very close in these aspects with their huge R&D personnel to tackle technical problems.

Compared with the SOI process, SOI wafers have certain advantages at the 28nm node, but at 20nm and 14nm, the advantages of SOI are obvious, and the cost of SOI wafers is lower than that of metal oxide semiconductors, and much lower than the cost of FinFet wafers.

Yang Jie clearly knows that only high-end computers or high-performance processors used in services can withstand the high cost of FinFet, and from the perspective of the development of the semiconductor industry, smartphones are an important driving force, but smartphone processors are subject to price and power pressure.

As a giant company of smart phones at this stage, Huaxing Group chooses to develop SOI process is naturally a very realistic choice, and now Huaxing Group has been able to start producing silicon wafers on insulators, but the SOI process and metal oxide semiconductor process are similar, and in the end, Huaxing Group still has to make up for its own technical shortcomings.

Infineon is very good at the design and development of metal-oxide-semiconductor structures, and it is not difficult to transplant these technologies to SOI.

In the past, STMicroelectronics relied on the SOI process to achieve a dual-core A9 processor with a frequency of up to 3G Hz at the 28nm node, and its power consumption is lower than that of the quad-core A9 processor with a frequency of 1.4GHz in mobile phone applications, which strongly demonstrates the advantages of the SOI process.

This SOI process can reduce the operating voltage to about 0.6V, compared to the minimum limit of around 0.9V for metal-oxide-semiconductor processes, and the use of SOI's back-bias technology provides a wider dynamic range of performance, making it particularly suitable for mobile and consumer multimedia applications.

As a reborn top IC scientist, Yang Jie understands the future scalability of each process technology, at least from 14nm to 7nm, SOI can develop three generations of process technology.

In fact, the SOI process makes it easier to achieve high-performance storage design, and in the development of processors, SOI's embedded storage solutions not only achieve increased capacity, but also greatly improve performance.

SOI and FinFet are on the same path, so the two processes are not completely opposite technologies, and the soi process can also be developed from 2D to 3D, that is, the development of the soi FinFet process.

At present, an ecosystem has been developed based on the FinFet structure process in China, and an industrial chain of process research, wafers, iP, foundries, integrated circuit design service companies, and integrated circuit design companies has been formed.

Yang Jie also hopes to build an ecosystem around the SOI structure process on this basis.

Now Huaxing Group has mastered the preparation technology of SOI wafers, and has now begun to introduce SOI process on the experimental production line to trial produce processors using SOI materials, but Loongson Semiconductor Company is not experienced enough in the iP design of SOI structure process, and the progress is still relatively slow, but the company is still insisting on independent research and development.

The process is the foundation, the design is the leader, the design must be closely integrated with the process, and the lack of technical team in the metal oxide semiconductor structure process in China can not be achieved overnight.

The application potential of SOI in the field of RF is very large, and Infineon's wireless technology department and Infineon's wafer fab are relatively good at this.

It's really sleepy, someone sent a pillow!

Yang Jie was also overjoyed in his heart, at this time he had already made up his mind to buy this technical team, but he did not leak this thought at all. 11