Huaxing Group's technology in gallium nitride devices was originally derived from the technology patents of Ximenkang company, at first it was a device for high-power electrical equipment, and later set up in Eagle Sauce and European R&D centers to obtain a large number of R&D personnel and technical patents for power devices, and transplanted the technology on silicon devices to gallium nitride devices, so it is easy to launch a large number of different types of devices and begin to be used in many fields.

For consumers, there is no barrier to entry and use, except for the smaller size of GaN power supplies.

Huaxing Group has mastered the preparation process of gallium nitride transistor structure through years of exploration, especially the preparation process of gallium nitride transistor structure is much less than that of silicon devices with existing technology, and the preparation cost of the device is lower.

The highest cost part of GaN devices is in the GaN material itself, which used to take more than two years to cultivate mainly high-quality and large-size GaN seed crystals.

Huaxing Group also organized a technical team to experiment with new technical solutions, and was also inspired by the method of melting texture of the top seed crystals used in the development of superconductor materials by the Chinese Academy of Sciences, and adopted a flux method to start the preparation of gallium nitride seed crystals and crystals, and passed hundreds of experiments, most of which failed, and finally succeeded in cultivating high-quality and large-size gallium nitride seed crystals, and shortened the cultivation time of the seed crystals to just over a month.

Wan Zihao also followed Yang Jie to visit the gallium nitride single crystal production plant of the gallium nitride material R&D center.

When he saw several huge seed crystal growth furnaces, he was also very interested and asked about some of these growth furnaces.

"In the previous experiments, we found that the nitrogen source at the gas-liquid interface first reached supersaturation and formed a gallium nitride polycrystalline shell, which led to the external nitrogen being blocked at the gas-liquid interface, resulting in the interruption of the nitrogen source supply in the growth system, and then the gallium nitride seed crystals in the growth system stopped the liquid phase epitaxial growth, on the other hand, the metal gallium source in the system was consumed, we thought of many ways, and finally found that adding carbon nitride as an additive material can effectively inhibit this situation. ”

Tong Jianwei, who accompanied him, said proudly that he was the first to join Huaxing Group and has now become the dean of the GaN Materials R&D Center.

"This set of growth furnace was designed by your Huaxing Group company?"

Wan Zihao asked.

"We also developed these devices in cooperation with the Institute of Ceramics of the Chinese Academy of Sciences in Jinshan City, but we also made a lot of innovations on these devices. ”

Tong Jianwei said with a smile: "Such a set of growth furnace can grow 30 seed rods with a diameter of 25 mm at a time, which can draw 120 kg of single crystal rods, and we are still developing larger diameter seed crystal rods, and the next step is to draw more than 150 kg of single crystal rods." ”

Wan Zihao then saw the seed crystal rods that had passed the test in the finished product workshop, and the technicians were packing them at this time.

Wan Zihao looked at these translucent conical GaN seed crystal rods, and his eyes were also happy, "With these high-quality seed crystal rods, Huaxing Group can produce gallium nitride materials in large quantities, which is excellent news for our domestic semiconductor industry!"

Now Huaxing Group has also established hundreds of sets of gallium nitride single crystal growth furnaces, of which the largest size of the single crystal growth furnace has built more than 40 sets, plus a lot of 30 kg, 60 kg, 90 kg level is a total of more than 60 sets of growth furnaces, now Huaxing Group can provide more than 200 tons of materials a year, and the production is up to nine purity of nine electronic grade high-purity single crystal silicon.

Wan Zihao also knew that the Institute of Ceramics of the Chinese Academy of Sciences in Jinshan City had also built a production line with a larger output, but it produced four nine-purity photovoltaic monocrystalline gallium nitride silicon wafers.

In the conversation with Yang Jie, Wan Zihao also learned that Huaxing Group will also authorize a number of domestic enterprises in the next few years to rapidly expand the production capacity of gallium nitride single crystal rods.

Over the years, Huaxing Group has also developed its own gallium nitride crystal preparation process, crystal rod cutting, chamfering, precision grinding and other processing technology and equipment are all developed by themselves, all of which show Huaxing Group's strong equipment research and development capabilities.

Of course, these are the high-intensity investment of hundreds of billions of US dollars in all aspects of Huaxing Group for more than ten years to accumulate such a strong technical strength.

Of course, now Huaxing Group has also earned a large amount of money every year, and the total revenue of Huaxing Group last year exceeded 450 billion US dollars, which is really to make money and make it soft.

The impact of Eagle Sauce on Huaxing Group's fēng shā on Huaxing Group's revenue is really small, and it has not stopped Huaxing Group's progress in the slightest.

Wan Zihao is also very happy about this, and he is very happy to have such a powerful high-tech group company in China.

Huaxing Group can make money is secondary, but Yang Jie leads such a large number of R&D technicians to pursue science and technology, and in many ways is already at the forefront of the world, which is what moved him the most.

Moreover, Huaxing Group has a very great influence on many domestic enterprises, and with the rise of Huaxing Group, a large number of high-tech enterprises have emerged, so that the country has risen rapidly in many high-end industries, and the speed of transformation of scientific research achievements into products and industries has grown visibly.

What shocked Wan Zihao even more was that Huaxing Group has now launched a research and development project to develop gallium nitride processors, with the aim of developing processors that can work in extreme environments such as operating temperatures of more than 500 degrees and high radiation.

Although Huaxing Group has basically mastered the preparation process of gallium nitride materials in light-emitting diodes, radio frequency devices and power electronic devices, it is considered to have mastered the technology of the device layer.

However, in order to develop processors, it is also necessary to overcome the difficulties faced at the system level, mainly the use of GaN transistors to achieve the design of NAND AND NAND gates, and the difficulty comes from the difference between GaN materials and silicon wafer materials, and the current silicon-based integrated circuit process is not compatible with the process technology of GaN materials, so there is still a long way to go.

The key to this project is GaN, a wide bandgap semiconductor selective region doping process technology, and only by solving these problems can a high-performance GaN processor be obtained.

However, Huaxing Group has been continuously conducting research and development in this area in the past ten years, and has accumulated a large number of technical patents in the basic research of doping process, and Yang Jie is still very confident in this.

He also set the task for the R&D team to develop the first gallium nitride processor within three years.