At this time, Xia Peisu, who had not spoken, spoke: "Mr. Pang, do you mean that the future development direction of Transwarp Technology is to develop a new Internet terminal, and rely on this terminal to support a new system and instruction set architecture system, and form an ecological closed loop?" ”

Pang Xuelin nodded with a smile and said, "That's right, that's what it means." ”

Xia Peisu frowned and said: "If this is the case, during that period of time, Hisilicon Semiconductor only has input, no output, how long can you last?" ”

Pang Xuelin smiled slightly and said: "This is not difficult, Huawei is ready to enter the mobile communication operator business next, there are many chips that need to be purchased from abroad, HiSilicon can undertake the research and development of some chips such as DSP chips, ASIC chips, FPGA chips and so on." In addition, in the consumer business, we are also preparing flash memory and second-generation synchronous dynamic random access memory. ”

"Flash storage? 2nd Generation Synchronous Dynamic Random Access Memory? ”

Xia Peisu and Ni Guangnan glanced at each other and were both taken aback.

Flash storage refers to flash storage.

In this day and age, neither technology is yet fully mature.

In 1984, Toshiba's Fujio Masaoka first proposed the concept of fast flash memory.

Unlike traditional computer memory, flash memory is non-volatile and its recording speed is also very fast.

Intel was the first company in the world to produce flash memory and put it on the market.

In 1988, Intel Corporation introduced a 256K-bit flash memory chip.

It is the size of a shoebox and is embedded in a tape recorder.

Later, this type of flash memory invented by Intel was collectively known as NOR flash memory. It combines EPROM (Erasable Programmable Read-Only Memory) and EEPROM (Electrically Erasable Programmable Read-Only Memory) technologies and has a SRAM interface.

EPROM means that the contents of it can be erased by special means and then rewritten.

Its basic unit circuit (storage cell) often uses a floating gate avalanche injection MOS circuit, abbreviated as FAMOS.

It is similar to the MOS circuit in that two highly concentrated P-type regions are grown on the N-type substrate, and the source S and drain D are elicited by the ohmic contact.

Between the source and drain there is a polycrystalline silicon gate floating in the SiO2 insulation, with no direct electrical connection to the surrounding area.

This kind of circuit is represented by whether the floating gate is charged or not, and after the floating gate is charged (such as a negative charge), just below it, a positive conductive channel is induced between the source and the drain, so that the MOS tube is conducted, that is, the deposit is 0.

If the floating gate is not electrified, no conductive channel is formed, and the MOS tube is not conducted, that is, 1 is deposited.

The working principle of the EEPROM basic memory cell circuit is similar to that of the EPROM, which is to generate a floating gate on top of the floating gate of the EPROM basic unit circuit, the former is called the first-stage floating gate, and the latter is called the second-stage floating gate.

An electrode can be drawn out for the second stage floating gate, so that the second stage floating gate can be connected to a certain voltage VG.

If VG is a positive voltage, a tunneling effect occurs between the first floating gate and the drain, causing electrons to be injected into the first floating gate, that is, programmed to write.

If VG is made to a negative voltage, the electrons of the first stage floating gate will be lost, that is, erased. It can be rewritten after erasing.

The basic cell circuit of flash memory, similar to EEPROM, consists of a double-layer floating gate MOS tube.

But the first layer of gate medium is thin and acts as a tunnel oxide layer.

The writing method is the same as that of EEPROM, and a positive voltage is applied to the second stage of the floating gate, so that the electrons enter the first stage of the floating gate.

The readout method is the same as that of EPROM. The erasing method is to add a positive voltage to the source, using the tunneling effect between the first stage of the floating gate and the source, to attract the negative charge injected into the floating gate to the source.

Since the source is erased with a positive voltage, the source of each unit is connected together, so that the fast-wipe memory cannot be erased by bytes, but by the whole chip or block.

Compared to the first type of NOR flash memory.

The second type of flash memory is called NAND flash memory.

It was developed by Hitachi in 1989 and is considered an ideal replacement for NOR flash memory.

NAND flash memory has a write cycle that is 90% shorter than NOR flash memory, and it is relatively fast to save and delete.

NAND's memory unit is only half that of NOVA, and NAND achieves better performance in a smaller storage space.

There is a big difference between NOR type and NAND type flash memory.

For example, NOR flash memory is more like memory, with separate address lines and data lines, but it is more expensive and has a smaller capacity.

The NAND type is more like a hard disk, the address line and the data line are the common I/O line, similar to the hard disk all the information is transmitted through a hard disk line, and the NAND type is lower than the NOR flash memory, and the capacity is much larger.

Therefore, NOR flash memory is more suitable for frequent random reading and writing occasions, usually used to store program code and run directly in the flash memory, mobile phones are the largest users of NOR flash memory, so the "memory" capacity of mobile phones is usually not large; NAND flash memory is mainly used to store data, such as flash disks and digital memory cards.

Xia Peisu frowned and said: "Mr. Pang, I have the impression that the market for flash memory is not big now, the application scope is also very narrow, and the technology is mainly in the hands of Samsung, Hitachi, Intel and other large manufacturers, can you make money by doing this?" ”

Pang Xuelin laughed and said, "Academician Xia, don't worry, the flash memory market is probably much bigger than you think!" There are some things that involve trade secrets, and I can't reveal them to you for the time being, but I can guarantee that a single flash memory will be enough to make HiSilicon a lot of money.

Xia Peisu and Ni Guangnan glanced at each other, a little surprised by Pang Xuelin's confidence.

Pang Xuelin didn't care about the thoughts of these two bigwigs, he didn't worry about the problem of flash memory at all.

Not to mention the memory of mobile phones in later generations, the USB flash drive that will appear in four years alone is enough to support the development of HiSilicon Semiconductor.

In the course of the development of the world's computer industry, storage devices have always been the key to the development of computers, the earliest computers did not have storage devices, the use of cardboard, and then replaced with tape, in the future, there was finally the emergence of storage devices, which is the floppy disk, the more common is the 3.5-inch floppy disk, which is commonly known as the A disk, and then finally there is a CD-ROM, whether it is a CD-ROM in a fairly long time frame is the most common storage device.

However, the disposable nature of the disc has also made everyone criticize.

Finally in 1998, the U disk appeared, because of its large capacity, it can be used repeatedly, plug and unplug at will, making it the most popular mobile storage device, until the twenties and thirties of the 21st century, it is the most popular mobile data transmission method in the world.

The U disk was first originated from China's Langke Technology, and this achievement is also regarded as the only original invention patent achievement belonging to Chinese in the field of computer storage in the past two decades.

However, Langke has a patent for a "USB flash drive", but not a patent for USB flash memory or USB memory.

Because of this, in the real world, although Langke can obtain tens of millions of revenue every year through patent lawsuits, it has not developed.

Until Pang Xuelin entered China's Sun World, Langke still relied on patent lawsuits and renting houses to make money, which was completely insulting to a technology company.

Therefore, Pang Xuelin does not plan to leave the U disk patent to the future Langke.

Just a few months ago, Pang Xuelin had already filed a USB patent application in the United States through Scober.

The USB interface is one of the most common interfaces for peripheral devices to connect to a computer host.

In addition to USB interfaces, there are also interfaces such as parallel buses.

However, the USB interface has a great advantage that makes it very popular in this field, that is, devices with this interface can be plug-and-play (plug and play is sometimes called hot swap) on the computer.

When the computer is turned on, the peripherals should be turned on first and then the host should be turned on, and the order when the computer is turned off is just the opposite.

The reason for following this boot sequence is that before the computer boots up, you must first have all the peripherals powered on and ready, and then wait for the host computer to check these devices one by one and install the appropriate software.

Only then can the computer function properly, otherwise there may be a situation where the peripheral is unavailable or the computer does not recognize the peripheral.

The advent of the USB interface has changed this situation, if a device is a USB interface, then it can be plugged into the computer host at any time, regardless of the state of the computer at this time, and if you want to remove the device, you can safely remove the device from the computer by simply following the specifications. This undoubtedly provides great convenience for people's study and life.

Historically, USB technology was invented by Intel's Chief System Technician Bart, and Intel finally decided to open up the technology for free and worked with Microsoft, Compaq and other companies to identify it as a common standard interface for computers.

After Pang Xuelin applied for a USB patent, he decided to make it free and open, and through Don Valentine's connections, he lobbied Compaq, Microsoft, Intel and other companies to accept this unified standard interface.

The feedback has been very good, and if nothing else, starting next year, the vast majority of computer manufacturers will produce personal computers, USB interfaces.

With such a foreshadowing, if Pang Xuelin withdraws from the USB flash drive in the future, no company will be able to bypass his patents from a technical point of view.

At that time, HiSilicon will be able to rely on the success of USB flash drives to obtain good returns in the field of memory chips, and form a virtuous circle between R&D, production, and sales.

Of course, Pang Xuelin naturally won't say this kind of thing to Xia Peisu and Ni Guang Nanming now.

Xia Peisu saw Pang Xuelin's confident look, opened his mouth, and finally didn't say anything.

To say that in the field of research and development, Xia Peisu is confident that he can beat the young man in front of him.

But in terms of doing business, Xia Peisu has no say in front of Pang Xuelin.

Don't you see that even RM Daily has publicly declared that Pang Xuelin is a young generation of entrepreneurial leaders?

Pang Xuelin's various operations in the process of Transwarp CVD marketing have even been heard of by everyone like Xia Peisu, who is obsessed with the academic field.

This shows Pang Xuelin's popularity in China.

At this time, Ni Guangnan said: "Mr. Pang, what do you mean by the second generation of synchronous dynamic random access memory?" ”

Synchronous Dynamic Random Access Memory, which refers to SDRAM.

This is a dynamic random access memory (DRAM) with a synchronous interface.

Usually DRAM has an asynchronous interface so that it can respond to changes in control input at any time.

SDRAM, on the other hand, has a synchronization interface that waits for a clock signal before responding to the control input, so that it can be synchronized with the computer's system bus. The clock is used to drive a finite state machine that pipes incoming instructions.

This allows SDRAM to have a more complex mode of operation compared to asynchronous DRAM without a synchronous interface.

Pipelines mean that the chip can accept a new instruction before processing the previous instruction. In a write pipeline, a write command can be executed immediately after another instruction has been executed, without waiting for data to be written to the storage queue. In a read pipeline, the required data arrives at a fixed number of clock frequencies after the read command is issued, and this waiting process can issue other additional instructions. This latency is known as wait time and is an important parameter when purchasing memory for a computer.

SDRAM was widely used in computers, from the first SDRAM to the subsequent generation of DDR, then DDR2 and DDR3 entered the mass market, and in 2015 DDR4 entered the consumer market.

What Pang Xuelin has to do is DDR memory.

The official name of DDR memory is DDR SDRAM (Dual Date Rate SDRAM), as the name suggests, it is a double-rate SDRAM, from the name it is known that it is an upgraded version of SDR SDRAM, DDR SDRAM transmits a signal on the rising edge and falling edge of the clock cycle, making its data transmission speed twice that of SDR SDRAM, and this will not increase power consumption, as for the addressing and control signals are the same as SDR SDRAM, Only on the rising edge was transmitted, which was a compromise on the compatibility and performance of memory controllers at the time.

DDR SDRAM uses a 184pin DIMM slot, the foolproof notch changes from two to one when SDR SDRAM, the common working voltage is 2.5V, the frequency of the first generation of DDR memory is 200MHz, and then DDR-266, DDR-333 and the mainstream DDR-400 of that era are slowly born, as for those running at 500MHz, 600MHz, 700MHz are considered overclocking, DDR memory just came out only single channelLater, there was a support for dual-pass chipsets, which directly doubled the bandwidth of the memory, and two DDR-400 memories can basically meet the FSB 800MHz Pentium 4 processor if they form a dual channel, and the capacity is from 128MB to 1GB.

DDR memory has achieved a complete victory in the war against RDRAM, so quite a lot of motherboard manufacturers have chosen to launch chipsets that support DDR memory, the motherboard market at that time was quite lively, not only Intel and AMD two heads-up, but also NVIDIA, VIA, SiS, ALI, ATI and other manufacturers, so there are quite a lot of CPUs that can use DDR memory, Socket 370's Pentium 3 and Celeron, Socket 478 and LGA 775's Pentium 4, Pentium D, Celeron 4, Celeron D, as long as you want the Core 2, you can actually plug it into some 865 motherboards with DDR memory, AMD's Socket A interface K7 and Socket 939, Socket 754 K8 architecture products can use DDR memory.